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N-Channel Power Field Effect Transistor
H02N60I Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
• Robust High Voltage Termination
• Avalanc he Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on)
Specified at Elevated Temperature
封装：TO-251
规格书
http://www.icsourse.com /uploads/soft/100728/H02N60I.pdf
H02N60I现货订购热线：
电话： 0755-8278 2277
手机： 13823737353
传真： 0755-83138727
Email：ryan#gongwin.com
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