GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz
The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz
high efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) Power Amplii er MMICs which offer
+30 dBm P1dB. The amplii er provides 20 dB of gain,
+32.5 dBm of saturated power, and 27% PAE from a
+5V supply voltage. The input is internally matched
to 50 Ohms while the output requires a minimum of
external components. Vpd can be used for full power
down or RF output power/current control. The ampl ii er
is packaged in a low cost, 3x3 mm leadless surface
mount package with an exposed base for improved
RF and thermal performance
Gain: 20 dB
Saturated Power: +32.5 dBm @ 27% PAE
Single Supply Voltage: +5V
Power Down Capability
3x3 mm Leadless SMT Package
品牌:HITTITE
封装:QFN16
规格书
http://www.icsourse.com /uploads/soft/100726/HMC408LP3TR.pdf
HMC408LP3TR 现货订购热线:
电话: 0755-8278 2277
手机: 13823737353
传真: 0755-83138727
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