M25PE20-VMN6TP FLASH 说明2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinoutThe M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle. The M25PE20 memory is organized as 4 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 1024 pages, or 262,144 bytes. The M25PE10 memory is organized as 2 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 512 pages, or 131, 072 bytes. The memories can be erased a page at a time, using the Page Erase instruction, a subsector at a time, using the SubSector Erase instruction, a sector at a time, using the Sector Erase instruction or as a whole, using the Bulk Erase instruction. The memory can be write protected by either hardware or software using a mix of volatile and non-volatile protection features, depending on the application needs. The protection granularity is of 64 Kbytes (sector granularity).  M25PE20-VMN6TP FLASH现货订购热线： M25PE20-VMN6TP FLASH pdf datasheet(责任编辑：www.gongwin.com) |
