M28W640HCB70ZB6F 64M FLASH说明64 Mbit (4 Mb x 16, boot block) 3 V supply Flash memoryThe M28W640HCT and M28W640HCB are 64 Mbit (4 Mbit x 16) non-volatile Flashmemories that can be erased electrically at block level and programmed in-system on a word-by-word basis using a 2.7 V to 3.6 V VDD supply. An optional 12V VPP power supply is provided to speed up customer programming. The devices feature an asymmetrical blocked architecture. They have an array of 135 blocks: 8 parameter blocks of 4 Kwords and 127 main blocks of 32 Kwords. The M28W640HCT has the parameter blocks at the top of the memory address space while the M28W640HCB locates the parameter blocks starting from the bottom. Features? Supply voltage–VDD = 2.7 V to 3.6 V –VPP = 12 V for fast program (optional) ? Access times: 70 ns ? Asynchronous Page Read mode – Page width: 4 words – Page access: 25 ns – Random access: 70 ns ? Programming time: –10 μs typical – Double Word Programming option – Quadruple Word Programming option ? Common Flash interface ? Memory blocks – Parameter blocks (top or bottom location) – Main blocks ? Block locking – All blocks locked at power-up – Any combination of blocks can be locked –WP for block lock-down ? Security – 128 bit user programmable OTP cells – 64 bit unique device identifier ? Automatic standby mode ? Program and Erase Suspend ? 100,000 program/erase cycles per block ? Electronic signature – Manufacturer code: 20h – Top device code, M28W640HCT: 8848h – Bottom device code, M28W640HCB: 8849h M28W640HCT封装：TSOP48 M28W640HCB封装：TFBGA48  M28W640HCB70ZB6F 64M FLASH现货订购热线： M28W640HCB70ZB6F 64M FLASHpdf datasheet(责任编辑：www.gongwin.com) |
