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32M X 16 DDR DRAM, 0.65 ns, PDSO66
• DDR 512M bit, die B, based on 110nm design rules
• Double data rate architecture: two data transfers per
clock cycle
• Bidirectional data strobe (DQS) is transmitted and
received with data, to be used in capturing data at the
receiver
• DQS is edge-aligned with data for reads and is center-
aligned with data for writes
封装：TSOP66
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