BF1211WR MOSFET说明N-channel dual-gate MOS-FETsFEATURES• Short channel transistor with high forward transferadmittance to input capacitance ratio • Low noise gain controlled amplifier • Excellent low frequency noise performance • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS• Gain controlled low noise VHF and UHF amplifiers for5 V digital and analog television tuner applications. DESCRIPTIONEnhancement type N-channel field-effect transistor withsource and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. 封装：SOT343RBF1211WR MOSFET现货订购热线（长期求购此型号）： 电话： 0755-8278 2277 手机： 13823737353 传真： 0755-83138727 Email：ryan#gongwin.com QQ： (责任编辑：www.gongwin.com) |
