IRF3415S IR说明HEXFET® Power MOSFETl Advanced Process Technology l Surface Mount (IRF3415S)l Low-profile through-hole (IRF3415L)l 175°C Operating Temperaturel Fast Switching l Fully Avalanche Rated 5/13/98 Absolute Maximum RatingsFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The D2Pak is a surface mount power package capable ofaccommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3415L) is available for low- profile applications 封装：D2Pak（TO-263）
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