ICSI 16M DRAM
DESCRIPTION
The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x
16-bit high-performance CMOS Dynamic Random Access
Memories. These devices offer an accelerated cycle access
called EDO Page Mode. EDO Page Mode allows 1,024 ran-
dom accesses within a single row with access cycle time as
short as 20 ns per 16-bit word. The Byte Write control, of upper
and lower byte, makes the IS41C16100S ideal for use in
16-, 32-bit wide data bus systems.
These features make the IS41C16100Sand IS41LV16100S
ideally suited for high-bandwidth graphics, digital signal
processing, high-performance computing systems, and
peripheral applications.
规格书
http://www.icsourse.com /uploads/soft/100728/IS41C16100S-50T.pdf
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