SI3443BDV-T1-E3 VISHAY MOSFET pdf datasheet
时间:2010-07-26 14:52来源:gongwin.com 作者:省芯商城 点击:
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SI3443BDV-T1-E3 VISHAY MOSFET pdf datasheet
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SI3443BDV-T1-E3 MOSFET产品说明：
P-Channel 2.5-V (G-S) MOSFET
| Vendor |
Vishay/Siliconix (VA) |
| Category |
Discrete Semiconductor Products |
| Mounting Type |
Surface Mount |
| FET Type |
MOSFET P-Channel, Metal Oxide |
| Drain to Source Voltage (Vdss) |
20V |
| Current - Continuous Drain (Id) @ 25° C |
3.6A |
| Rds On (Max) @ Id, Vgs |
60 mOhm @ 4.7A, 4.5V |
| Input Capacitance (Ciss) @ Vds |
- |
| Power - Max |
1.1W |
| Packaging |
Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs |
9nC @ 4.5V |
| Package / Case |
6-TSOP |
| FET Feature |
Logic Level Gate |
| Lead Free Status |
Lead Free |
| RoHS Status |
RoHS Compliant |
封装：TSOP6
SI3443BDV-T1-E3现货订购热线：
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