V54C3256804VDI6产品说明：
ProMOS内存,台湾茂德 256M SDRAM 32×8M
V54C3256804VDI6 Features
■ 4 banks x 4Mbit x 16 organization
■ 4 banks x 8Mbit x 8 organization
■ 4 banks x16Mbit x 4 organization
■ High speed data transfer rates up to 166 MHz
■ Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
■ Single Pulsed RAS Interface
■ Data Mask for Read/Write Control
■ Four Banks controlled by BA0 & BA1
■ Programmable CAS Latency: 2, 3
■ Programmable Wrap Sequence: Sequential or
Interleave
■ Programmable Burst Length:
1, 2, 4, 8, and full page for Sequential Type
1, 2, 4, 8 for Interleave Type
■ Multiple Burst Read with Single Write Operation
■ Automatic and Controlled Precharge Command
■ Random Column Address every CLK (1-N Rule)
■ Power Down Mode
■ Auto Refresh and Self Refresh
■ Refresh Interval: 8192 cycles/64 ms
■ Available in 54 Pin TSOP II, 60 Ball FBGA, 54
Ball FBGA
■ LVTTL Interface
■ Single (3.0V~3.3 V)±0.3 V Power Supply
■ Industrial Temperature (TA): -40C to +85C
V54C3256804VDI6 命名规则
| V54CXXXXXXX[Special Feature][Package Code][Speed Code][Temperature] |
| Special Feature |
Package Code
|
Speed Code
|
Temperature
|
|
|
LOW POWER |
I: |
GREEN TSOP |
10: |
100MHz |
BLANK: |
0 — 70°C |
|
|
ULTRA LOW POWER |
J: |
GREEN 60-Ball FBGA |
8: |
125MHz |
I: |
-40 — 85°C |
| |
|
K: |
GREEN 54-Ball FBGA |
75: |
133MHz |
H: |
-40 — 105°C |
| |
|
|
|
7: |
143MHz |
E: |
-40 — 125°C |
| |
|
|
|
6:
|
166MHz |
|
|
| |
|
|
|
5:
|
200MHz |
|
|
| ﹡LEAD-FREE：LEAD-FREE (ROHS Compliant) |
| ﹡GREEN：LEAD- and HALOGEN-FREE (ROHS Compliant) |
封装：TSOP II 54
V54C3256804VDI6现货订购热线：
电话： 0755-8278 2277
手机： 13823737353
传真： 0755-83138727
Email：ryan#gongwin.com
QQ：  （无需加为好友,直接点击即可询价）
V54C3256804VDI6产品IC Datasheet：
V54C3256804VDI6 datasheet
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