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HEXFET® Power MOSFET
IRF7706 Features:
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
IRF7706 Description
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards
| Vendor |
International Rectifier |
| Category |
Discrete Semiconductor Products |
| Mounting Type |
Surface Mount |
| FET Type |
MOSFET P-Channel, Metal Oxide |
| Drain to Source Voltage (Vdss) |
30V |
| Current - Continuous Drain (Id) @ 25° C |
7A |
| Rds On (Max) @ Id, Vgs |
22 mOhm @ 7A, 10V |
| Input Capacitance (Ciss) @ Vds |
2211pF @ 25V |
| Power - Max |
1.51W |
| Packaging |
Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs |
72nC @ 10V |
| Package / Case |
8-TSSOP |
| FET Feature |
Logic Level Gate |
| Lead Free Status |
Lead Free |
| RoHS Status |
RoHS Compliant |
IRF7706现货订购热线：
电话： 0755-8278 2277
手机： 13823737353
传真： 0755-83138727
Email：ryan#gongwin.com
QQ：  （无需加为好友,直接点击即可询价）
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